any changing of specification will not be informed individual PZT2222A npn silicon general purpose transistor r o h s c o m p l i a n t p r o d u c t http://www.secosgmbh.com elektronische bauelemente features power dissipation p cm :1 w ? ta m b = 2 5 ? collector current i cm :0.6 a collector-base voltage v (br)cbo :75v operating and storage junction temperature range t j t stg : -55 to +150 electrical characteristics ? tamb=25 unless otherwise specified ? parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= 10 - a i e =0 75 v collector-emitter breakdown voltage v (br)ceo ic= 10ma i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 - a i c =0 6 v collector cut-off current i cbo v cb =60v , i e =0 0. 01 - a emitter cut-off current i ebo v eb = 3v , i c =0 0. 01 - a h fe(1) v ce =10v, i c = 0.1ma 35 h fe(2) v ce =10v, i c = 1ma 50 h fe(3) v ce =10v, i c = 10ma 75 h fe(4) v ce =10v, i c = 150ma 100 300 h fe(5) v ce =1v, i c = 150ma 50 dc current gain h fe(6) v ce =10v, i c = 500ma 40 v ce (sat) i c =500 ma, i b = 50ma 1 v collector-emitter saturation voltage v ce (sat) i c =150 ma, i b = 15ma 0.3 v v be (sat) i c =500 ma, i b = 50ma 2.0 v base-emitter saturation voltage v be (sat) i c =150 ma, i b =15ma 0.6 1.2 v transition frequency f t v ce =20v, i c = 20ma f= 100mhz 300 mhz output capacitance c ob v cb =10v, i e = 0 f= 1mhz 8 pf delay time t d 10 ns rise time t r v cc =30v, i c =150ma v be(off) =0.5v,i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma i b1 = i b2 = 15ma 60 ns unit : mm so t -223 1. base 2. collector 3. emitter f f f f e e f e f e e f 5 5 f e 1 2 3 b c e c 01-jun-2002 rev. a page 1 of 4 0 d [
elektronische bauelemente pzt 2222a npn silicon general purpose transistor ? switching time equivalent test circuits http://www.secosgmbh.com/ chopecctowotbeome e.me e.me scope rise time < 4 ns *total shunt capacitance of test jig, connectors, and oscilloscope.
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